data sheet 1 of 10 rev. 03, 2009-03-31 all published data at t case = 25c unless otherwise indicated esd: electrostatic discharge sensitive device?observe handling precautions! ptfa091201gl PTFA091201HL confidential, limited internal distribution description the ptfa091201gl and PTFA091201HL are 120-watt ldmos fets designed for ultra-linear gsm/edge power amplifier applications in the 920 to 960 mhz band. features include input and output matching, and thermally-enhanced plastic open-cavity packages with copper flanges. manufactured with infineon's advanced ldmos process, these devices provide excellent thermal performance and superior reliability. thermally-enhanced high power rf ldmos fets 120 w, 920 ? 960 mhz edge modulation spectrum performance v dd = 28 v, i dq = 750 ma, ? = 959.8 mhz -90 -80 -70 -60 -50 -40 -30 -20 -10 0 36 38 40 42 44 46 48 50 output power, avg. (dbm) modulation spectrum (db) 10 15 20 25 30 35 40 45 50 55 drain efficiency (%) efficiency 400 khz 600 khz rf characteristics edge measurements ( not subject to production test?verified by design/characterization in infineon test fixture ) v dd = 28 v, i dq = 750 ma, p out = 50 w (avg), ? = 959.8 mhz characteristic symbol min typ max unit error vector magnitude evm (rms) ? 2.5 ? % modulation spectrum @ 400 khz acpr ? ?60 ? dbc modulation spectrum @ 600 khz acpr ? ?74 ? dbc gain g ps ? 18.5 ? db drain efficiency h d ? 44 ? % features ? thermally-enhanced plastic open-cavity (epoc?) packages with copper flanges, pb-free and rohs compliant ? broadband internal matching ? typical edge performance - average output power = 50 w - gain = 18.5 db - efficiency = 44% ? typical cw performance - output power at p?1db = 135 w - gain = 17 db - efficiency = 64% ? integrated esd protection: human body model, class 2 (minimum) ? excellent thermal stability, low hci drift ? capable of handling 10:1 vswr @ 28 v, 120?w?(cw) output power *see infineon distributor for future availability. ptfa091201gl package pg-63248-2 PTFA091201HL package pg-64248-2
data sheet 2 of 10 rev. 03, 2009-03-31 ptfa091201gl PTFA091201HL confidential, limited internal distribution rf characteristics (cont.) two?tone measurements (tested in infineon test fixture) v dd = 28 v, i dq = 750 ma, p out = 110 w pep, ? = 960 mhz, tone spacing = 1 mhz characteristic symbol min typ max unit gain g ps 18.0 18.5 ? db drain efficiency h d 45 48 ? % intermodulation distortion imd ? ?28 ?26 dbc dc characteristics characteristic conditions symbol min typ max unit drain-source breakdown voltage v gs = 0 v, i ds = 10 ma v (br)dss 65 ? ? v drain leakage current v ds = 28 v, v gs = 0 v i dss ? ? 1.0 a v ds = 63 v, v gs = 0 v i dss ? ? 10.0 a on-state resistance v gs = 10 v, v ds = 0.1 v r ds(on) ? 0.07 ? w operating gate voltage v ds = 28 v, i dq = 750 ma v gs 2.0 2.5 3.0 v gate leakage current v gs = 10 v, v ds = 0 v i gss ? ? 1.0 a maximum ratings parameter symbol value unit drain-source voltage v dss 65 v gate-source voltage v gs ?0.5 to +12 v junction temperature t j 200 c total device dissipation p d 625 w above 25c derate by 3.57 w/c storage temperature range t stg ?40 to +150 c thermal resistance (t case = 70c, 120 w cw, soldered) r q jc 0.28 c/w ordering information type and version package package description shipping marking ptfa091201gl v1 pg-63248-2 thermally-enhanced slotted flange, tray ptfa091201gl single-ended PTFA091201HL v1 pg-64248-2 thermally-enhanced earless flange, tray PTFA091201HL single-ended *see infineon distributor for future availability.
data sheet 3 of 10 rev. 03, 2009-03-31 ptfa091201gl PTFA091201HL confidential, limited internal distribution broadband performance v dd = 28 v, i dq = 750 ma, p out = 120 w 16 17 18 19 20 900 910 920 930 940 950 960 frequency (mhz) gain (db) 45 50 55 60 65 return loss (db), efficiency (%) gain return loss efficiency -10 -15 -20 -25 intermodulation distortion vs. output power v dd = 28 v, i dq = .750 ma, ? 1 = 959 mhz, ? 2 = 960 mhz -70 -60 -50 -40 -30 -20 -10 36 37 38 39 40 41 42 43 44 45 46 47 48 49 output power, avg (dbm) imd (dbc) 3rd order 7th 5th typical performance (data taken in a production test fixture) im3 vs. output power at selected biases v dd = 28 v, ? 1 = 959 mhz, ? 2 = 960 mhz series show idq -65 -60 -55 -50 -45 -40 -35 -30 -25 -20 37 39 41 43 45 47 49 output power, avg (dbm) imd (dbc) 525 ma 940 ma 750 ma gain vs. output power v dd = 28 v, ? = 960 mhz 16.0 16.5 17.0 17.5 18.0 18.5 19.0 19.5 20.0 38 40 42 44 46 48 50 52 54 output power (dbm) power gain (db) i dq = 750 ma i dq = 1125 ma i dq = 375 ma
data sheet 4 of 10 rev. 03, 2009-03-31 ptfa091201gl PTFA091201HL confidential, limited internal distribution edge performance v dd = 28 v, i dq = 750 ma, ? = 959.8 mhz 0 1 2 3 4 5 6 7 8 9 36 38 40 42 44 46 48 50 output power, avg. (dbm) rms evm (average %) . 10 15 20 25 30 35 40 45 50 55 drain efficiency (%) efficiency evm t case = ?25c t case = 25c t case = 90c output power (p?1db) vs. supply voltage i dq = 750 ma, ? = 960 mhz 49.5 50.0 50.5 51.0 51.5 52.0 52.5 24 26 28 30 supply voltage (v) output power (dbm) is-95 cdma performance v dd = 28 v, i dq = 750 ma, ? = 960 mhz 5 10 15 20 25 30 35 40 32 34 36 38 40 42 44 46 output power (dbm), avg. drain efficiency (%) -80 -70 -60 -50 -40 -30 -20 -10 adj. ch. power ratio (dbc) adj 750 khz efficiency alt1 1.98 mhz gain & efficiency vs. output power v dd = 28 v, i dq = 750 ma, ? = 960 mhz 14 15 16 17 18 19 20 40 42 44 46 48 50 52 output power (dbm) gain (db) 10 20 30 40 50 60 70 drain efficiency (%) efficiency gain typical performance (cont.)
data sheet 5 of 10 rev. 03, 2009-03-31 ptfa091201gl PTFA091201HL confidential, limited internal distribution typical performance (cont.) 0.1 0.3 0.5 0.2 0.4 0 . 1 0 . 1 - w a v e l e n g t h s t o w a r w a v e l e n g t h s t o w a r d l o a d - 0 . 0 920 mhz 960 mhz 920 mhz z load z source 960 mhz z 0 = 50 w z source z load g s d frequency z source w z load w mhz r jx r jx 920 5.86 ?0.32 2.20 0.69 930 5.84 ?0.27 2.17 0.69 940 5.85 ?0.02 2.16 0.85 950 5.82 0.10 2.15 0.92 960 5.79 0.27 2.13 1.02 broadband circuit impedance bias voltage vs. temperature voltage normalized to typical gate voltage, series show current 0.96 0.97 0.98 0.99 1.00 1.01 1.02 1.03 -20 0 20 40 60 80 100 case temperature (c) normalized bias voltage (v) 0.4 a 1.2 a 3.0 a 6.0 a 9.0 a 12.0 a 16.0 a
data sheet 6 of 10 rev. 03, 2009-03-31 ptfa091201gl PTFA091201HL confidential, limited internal distribution a 0 9 1 2 0 1 e f _ s c h v dd r3 2k v c3 0.001f c2 0.001f q1 bcp56 r2 1.3k v qq1 lm7805 c1 0.001f v dd r5 5.1k v r4 2k v r1 1.2k v l 1 r8 10 v dut rf_in l 5 c7 0.1f c5 0.1f c4 10f 35v c8 0.01f c9 33pf c10 33pf r6 10 v c12 7.5pf c11 1.2pf c13 0.7pf l 2 l 3 l 4 l 8 l 6 l 7 c19 33pf r7 5.1k v c6 33pf c24 1.0pf c25 1.0pf c27 33pf l1 c14 33pf c15 1f c16 10f 50v c18 10f 50v c26 2.4pf c28 0.5pf c17 0.1f l2 l 9 l 10 l 11 l 12 l 13 c20 1f c21 10f 50v c22 0.1f c23 10f 50v rf_out reference circuit reference circuit schematic for ? = 960 mhz circuit assembly information dut ptfa091201gl or PTFA091201HL ldmos transistor pcb 0.76 mm [.030"] thick, e r = 4.5 rogers tmm4 2 oz. copper microstrip electrical characteristics at 960 mhz 1 dimensions: l x w ( mm) dimensions: l x w (in.) l 1 0.072 l , 50.0 w 12.27 x 1.40 0.483 x 0.055 l 2 0.115 l , 50.0 w 19.53 x 1.40 0.769 x 0.055 l 3 0.029 l , 50.0 w 5.08 x 1.40 0.200 x 0.055 l 4 0.062 l , 7.5 w 9.53 x 16.15 0.375 x 0.636 l 5 0.149 l , 70.0 w 26.31 x 0.71 1.036 x 0.028 l 6, l 7 0.122 l , 55.0 w 20.96 x 1.17 0.825 x 0.046 l 8 0.027 l , 7.9 w 4.06 x 15.24 0.160 x 0.600 l 9 0.103 l , 7.9 w 15.75 x 15.24 0.620 x 0.600 l 10 0.072 l , 7.9 w 11.02 x 15.24 0.434 x 0.600 l 11 0.155 l , 38.0 w 25.78 x 2.13 1.015 x 0.084 l 12 0.013 l , 50.0 w 2.24 x 1.40 0.088 x 0.055 l 13 0.015 l , 50.0 w 2.59 x 1.40 0.102 x 0.055 1 electrical characteristics are rounded.
data sheet 7 of 10 rev. 03, 2009-03-31 ptfa091201gl PTFA091201HL confidential, limited internal distribution component description suggested manufacturer p/n or comment c1, c2, c3 capacitor, 0.001 f digi-key pcc1772ct-nd c4 tantalum capacitor, 10 f, 35 v digi-key 399-1655-2-nd c5, c7 c17, c22 capacitor, 0.1 f digi-key pcc104bct-nd c6, c9, c10, c14, ceramic capacitor, 33 pf atc 100b 330 c19, c27 c8 capacitor, 0.01 f atc 200b 103 c11 ceramic capacitor, 1.2 pf atc 100b 1r2 c12 ceramic capacitor, 7.5 pf atc 100b 7r5 c13 ceramic capacitor, 0.7 pf atc 100b 0r7 c15, c20 capacitor, 1.0 f atc 920c105 c16, c18, c21, c23 tantalum capacitor, 10 f , 50 v garrett electronics tpse106k050r0400 c24, c25 ceramic capacitor, 1.0 pf atc 100b 1r0 c26 ceramic capacitor, 2.4 pf atc 100b 2r4 c28 ceramic capacitor, 0.5 pf atc 100b 0r5 l1, l2 ferrite, 8.9 mm elna magnetics bds 4.6/3/8.9-4s2 q1 transistor infineon technologies bcp56 qq1 voltage regulator national semiconductor lm7805 r1 chip resistor 1.2 k-ohms digi-key p1.2kgct-nd r2 chip resistor 1.3 k-ohms digi-key p1.3kgct-nd r3 chip resistor 2 k-ohms digi-key p2kect-nd r4 potentiometer 2 k-ohms digi-key 3224w-202etr-nd r5, r7 chip resistor 5.1 k-ohms digi-key p5.1kect-nd r6, r8 chip resistor 10 ohms digi-key p10ect-nd a091201in_01 a091201out_01 qq1 c3 c1 r2 c2 r1 r5 r3 c5 r6 r7 c9 c6 c8 c7 c11 c10 c12 c13 c14 c24 c25 c26 c19 c21 c22 c16 c17 c23 c18 c27 c28 r8 c15 c20 a091201ef_assy rf_in rf_out lm l1 r4 q1 c4 l2 v dd v dd v dd reference circuit (cont.) reference circuit assembly diagram (not to scale)* *gerber files for this circuit available on request
data sheet 8 of 10 rev. 03, 2009-03-31 ptfa091201gl PTFA091201HL confidential, limited internal distribution package outline specifications package pg-63248-2 c l 0.064 (.0025) ?a? c l 4.830.51 [.190.020] c l pg-63248-2(g)_po_8-28-08 20.27 [.798] 34.04 0.08 [1.340 .003] 3x r0.51 +1.14 ?0.25 [r.020 ] +.045 ?.010 45 x 2.72 [45 x .107] 45 x 1.78 [45 x .070] 6. 2x r1.63 [r.064] 9.78 0.08 [.385 .003] 3.63 +0.25 ?0.13 [.143 ] +.010 ?.005 diagram notes?unless otherwise specified: 1. interpret dimensions and tolerances per asme y14.5m-1994. 2. primary dimensions are mm. alternate dimensions are inches. 3. pins: d = drain, s = source, g = gate. 4. lead thickness: 0.10 + 0.051/?0.025 mm [.004 +0.002/?0.001 inch]. 5. gold plating thickness: < 0.254 micron [< 10 microinch] 6. tabs may protrude 0.13 [.005] max from body. 7. all tolerances 0.127 [.005] unless specified otherwise.
data sheet 9 of 10 rev. 03, 2009-03-31 ptfa091201gl PTFA091201HL confidential, limited internal distribution package outline specifications (cont.) package pg-64248-2 diagram notes?unless otherwise specified: 1. interpret dimensions and tolerances per asme y14.5m-1994. 2. primary dimensions are mm. alternate dimensions are inches. 3. pins: d = drain, s = source, g = gate. 4. lead thickness: 0.10 + 0.051/?0.025 mm [.004 +0.002/?0.001 inch]. 5. gold plating thickness: < 0.254 micron [< 10 microinch] 6. tabs may protrude 0.13 [.005] max from body. 7. all tolerances 0.127 [.005] unless specified otherwise. pg-64248-2(h)_po_11-12-08 9.78 0.08 [.385 .003] 20.57 0.08 [.810 .003] find the latest and most complete information about products and packaging at the infineon internet page http://www.infineon.com/rfpower
data sheet 10 of 10 rev. 03, 2009-03-31 ptfa091201gl/hl-v1 confidential, limited internal distribution revision history: 2009-03-31 data sheet previous version: 2008-08-27, data sheet page subjects (major changes since last revision) 8, 9 update package information goldmos ? is a registered trademark of infineon technologies ag. edition 2009-03-31 published by infineon technologies ag 81726 munich , germany ? 2009 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( www.infineon.com/rfpower ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. we listen to your comments any information within this document that you feel is wrong, unclear or missing at all? your feedback will help us to continuously improve the quality of this document. please send your proposal (including a reference to this document) to: highpowerrf@infineon.com to request other information, contact us at: +1 877 465 3667 (1-877-go-ldmos) usa toll-free or +1 408 776 0600 international
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